NVMFS027N10MCLT1G onsemi
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.69 EUR |
| 3000+ | 0.68 EUR |
| 4500+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS027N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Power Dissipation (Max): 3.5W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS027N10MCLT1G nach Preis ab 0.7 EUR bis 2.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMFS027N10MCLT1G | onsemi |
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm |
auf Bestellung 2629 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
NVMFS027N10MCLT1G | onsemi |
Description: PTNG 100V LL SO8FLQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 38µA Power Dissipation (Max): 3.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 161486 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMFS027N10MCLT1G |
![]() |
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 2629 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.33 EUR |
| 100+ | 1 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.77 EUR |
| 1500+ | 0.7 EUR |
| NVMFS027N10MCLT1G |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 38µA
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: PTNG 100V LL SO8FL
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 38µA
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 161486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 15+ | 1.46 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.92 EUR |

