Produkte > ONSEMI > NVMFS027N10MCLT1G
NVMFS027N10MCLT1G

NVMFS027N10MCLT1G onsemi

nvmfs027n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 160500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.58 EUR
3000+0.57 EUR
4500+0.56 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFS027N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Power Dissipation (Max): 3.5W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS027N10MCLT1G nach Preis ab 0.59 EUR bis 1.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFS027N10MCLT1G NVMFS027N10MCLT1G Hersteller : onsemi 74B9AF2BC72EE52233B5354FC594CB6A1BFC68BFC6A72BBABCF3046B0FF3463A.pdf MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 2629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.12 EUR
100+0.84 EUR
500+0.73 EUR
1000+0.65 EUR
1500+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS027N10MCLT1G NVMFS027N10MCLT1G Hersteller : onsemi nvmfs027n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 161486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
15+1.23 EUR
100+0.9 EUR
500+0.77 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS027N10MCLT1G Hersteller : ON Semiconductor nvmfs027n10mcl-d.pdf PTNG 100V LL SO8FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS027N10MCLT1G Hersteller : ONSEMI nvmfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS027N10MCLT1G Hersteller : ONSEMI nvmfs027n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 137A; 23W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 137A
Power dissipation: 23W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH