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NVMFS2D3P04M8LT1G

NVMFS2D3P04M8LT1G onsemi

nvmfs2d3p04m8l-d.pdf Hersteller: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 782 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.33 EUR
10+ 4.48 EUR
100+ 3.62 EUR
500+ 3.22 EUR
Mindestbestellmenge: 4
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Technische Details NVMFS2D3P04M8LT1G onsemi

Description: MV8 P INITIAL PROGRAM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 3.8W (Ta), 205W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 2.7mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS2D3P04M8LT1G nach Preis ab 4.03 EUR bis 7.8 EUR

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NVMFS2D3P04M8LT1G Hersteller : onsemi NVMFS2D3P04M8L_D-2497359.pdf MOSFET MV8 P INITIAL PROGRAM
auf Bestellung 3490 Stücke:
Lieferzeit 653-667 Tag (e)
Anzahl Preis ohne MwSt
7+7.8 EUR
10+ 6.55 EUR
25+ 6.19 EUR
100+ 5.3 EUR
250+ 5.02 EUR
500+ 4.71 EUR
1000+ 4.03 EUR
Mindestbestellmenge: 7
NVMFS2D3P04M8LT1G транзистор
Produktcode: 200395 		Transistoren > Transistoren P-Kanal-Feld
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NVMFS2D3P04M8LT1G Hersteller : ON Semiconductor nvmfs2d3p04m8l-d.pdf Power MOSFET, Single P-Channel
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NVMFS2D3P04M8LT1G Hersteller : ON Semiconductor nvmfs2d3p04m8l-d.pdf Trans MOSFET P-CH 40V 31A 5-Pin SO-FL EP T/R Automotive AEC-Q101
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NVMFS2D3P04M8LT1G NVMFS2D3P04M8LT1G Hersteller : onsemi nvmfs2d3p04m8l-d.pdf Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar