NVMFS3D0P04M8LT1G onsemi
| Anzahl | Preis |
|---|---|
| 1+ | 4.7 EUR |
| 10+ | 4.22 EUR |
| 100+ | 3.41 EUR |
| 500+ | 2.8 EUR |
| 1500+ | 2.31 EUR |
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Technische Details NVMFS3D0P04M8LT1G onsemi
Description: MV8 P INITIAL PROGRAM, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.4V @ 2mA, Power Dissipation (Max): 3.9W (Ta), 171W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V.
Weitere Produktangebote NVMFS3D0P04M8LT1G nach Preis ab 2.72 EUR bis 5.86 EUR
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NVMFS3D0P04M8LT1G | onsemi |
 Description: MV8 P INITIAL PROGRAMQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.4V @ 2mA Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS3D0P04M8LT1G |
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Hersteller: onsemi
Description: MV8 P INITIAL PROGRAM
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MV8 P INITIAL PROGRAM
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.86 EUR |
| 10+ | 3.88 EUR |
| 100+ | 2.72 EUR |