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NVMFS3D0P04M8LT1G

NVMFS3D0P04M8LT1G onsemi

NVMFS3D0P04M8L_D-2497347.pdf Hersteller: onsemi
MOSFET Power MOSFET, Single P-Channel, -40 V, 2.7 mohm, -183 A
auf Bestellung 1270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.70 EUR
10+4.22 EUR
100+3.41 EUR
500+2.80 EUR
1500+2.31 EUR
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Technische Details NVMFS3D0P04M8LT1G onsemi

Description: MV8 P INITIAL PROGRAM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V, Power Dissipation (Max): 3.9W (Ta), 171W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 2mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V, Qualification: AEC-Q101.

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NVMFS3D0P04M8LT1G NVMFS3D0P04M8LT1G Hersteller : onsemi nvmfs3d0p04m8l-d.pdf Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.88 EUR
100+2.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS3D0P04M8LT1G NVMFS3D0P04M8LT1G Hersteller : ON Semiconductor nvmfs3d0p04m8l-d.pdf Trans MOSFET P-CH 40V 28A Automotive 5-Pin SO-FL EP T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
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NVMFS3D0P04M8LT1G NVMFS3D0P04M8LT1G Hersteller : ON Semiconductor nvmfs3d0p04m8l-d.pdf Trans MOSFET P-CH 40V 28A Automotive AEC-Q101 5-Pin SO-FL EP T/R
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NVMFS3D0P04M8LT1G Hersteller : ONSEMI nvmfs3d0p04m8l-d.pdf NVMFS3D0P04M8LT1G SMD P channel transistors
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NVMFS3D0P04M8LT1G NVMFS3D0P04M8LT1G Hersteller : onsemi nvmfs3d0p04m8l-d.pdf Description: MV8 P INITIAL PROGRAM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH