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NVMFS4C01NWFT1G

NVMFS4C01NWFT1G onsemi

nvmfs4c01n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+3.71 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFS4C01NWFT1G onsemi

Description: MOSFET N-CH 30V 49A/319A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc), Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V, Power Dissipation (Max): 3.84W (Ta), 161W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V, Qualification: AEC-Q101.

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NVMFS4C01NWFT1G NVMFS4C01NWFT1G Hersteller : onsemi nvmfs4c01n-d.pdf MOSFETs NFET SO8FL 30V 305A 0.9MO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.23 EUR
10+5.05 EUR
100+3.84 EUR
500+3.56 EUR
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NVMFS4C01NWFT1G NVMFS4C01NWFT1G Hersteller : onsemi nvmfs4c01n-d.pdf Description: MOSFET N-CH 30V 49A/319A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.84W (Ta), 161W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10144 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.16 EUR
10+6.02 EUR
100+4.87 EUR
500+4.33 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS4C01NWFT1G NVMFS4C01NWFT1G Hersteller : ON Semiconductor nvmfs4c01n-d.pdf Trans MOSFET N-CH 30V 49A Automotive 5-Pin SO-FL EP T/R
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NVMFS4C01NWFT1G NVMFS4C01NWFT1G Hersteller : ON Semiconductor nvmfs4c01n-d.pdf Trans MOSFET N-CH 30V 57A Automotive AEC-Q101 5-Pin SO-FL EP T/R
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NVMFS4C01NWFT1G Hersteller : ONSEMI nvmfs4c01n-d.pdf NVMFS4C01NWFT1G SMD N channel transistors
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