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NVMFS5113PLWFT1G

NVMFS5113PLWFT1G onsemi

nvmfs5113pl-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.97 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFS5113PLWFT1G onsemi

Description: MOSFET P-CH 60V 10A/64A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V, Power Dissipation (Max): 3.8W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V, Qualification: AEC-Q101.

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NVMFS5113PLWFT1G NVMFS5113PLWFT1G Hersteller : onsemi NVMFS5113PL_D-2319467.pdf MOSFETs NFET SO8FL 60V 69A 16MOHM
auf Bestellung 1924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.54 EUR
10+3.94 EUR
100+2.76 EUR
500+2.25 EUR
1500+2.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5113PLWFT1G NVMFS5113PLWFT1G Hersteller : onsemi nvmfs5113pl-d.pdf Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.81 EUR
10+3.80 EUR
100+2.66 EUR
500+2.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5113PLWFT1G NVMFS5113PLWFT1G Hersteller : ON Semiconductor NVMFS5113PL_D-1814479.pdf MOSFET NFET SO8FL 60V 69A 16MOHM
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5113PLWFT1G NVMFS5113PLWFT1G Hersteller : ON Semiconductor nvmfs5113pl-d.pdf Trans MOSFET P-CH 60V 10A Automotive 5-Pin(4+Tab) SO-FL T/R
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NVMFS5113PLWFT1G Hersteller : ONSEMI nvmfs5113pl-d.pdf NVMFS5113PLWFT1G SMD P channel transistors
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