NVMFS5833NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 40V 16A 5DFN
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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Technische Details NVMFS5833NLT1G onsemi
Description: MOSFET N-CH 40V 16A 5DFN, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 3.7W (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.

