NVMFS5C442NWFET1G onsemi
Hersteller: onsemiDescription: T6-40V N 2.3 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.24 EUR |
| 10+ | 2.7 EUR |
| 100+ | 2.15 EUR |
| 500+ | 1.82 EUR |
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Technische Details NVMFS5C442NWFET1G onsemi
Description: T6-40V N 2.3 MOHMS SL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.7W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 4V @ 90µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C442NWFET1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NVMFS5C442NWFET1G | Hersteller : ON Semiconductor |
T6-40V N 2.3 MOHMS SL |
Produkt ist nicht verfügbar |
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| NVMFS5C442NWFET1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 42W; DFNW5 Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 32nC On-state resistance: 2.3mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 42W Drain current: 140A Pulsed drain current: 900A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5C442NWFET1G | Hersteller : onsemi |
Description: T6-40V N 2.3 MOHMS SL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMFS5C442NWFET1G | Hersteller : onsemi |
MOSFETs Single N-Channel Power MOSFET 40V, 140A, 2.3mohm |
Produkt ist nicht verfügbar |
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| NVMFS5C442NWFET1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 42W; DFNW5 Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 32nC On-state resistance: 2.3mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 42W Drain current: 140A Pulsed drain current: 900A |
Produkt ist nicht verfügbar |