Produkte > ONSEMI > NVMFS5C604NT1G
NVMFS5C604NT1G

NVMFS5C604NT1G onsemi

nvmfs5c604n-d.pdf Hersteller: onsemi
Description: NFET SO8FL 60V 287A 1.2MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 10 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.97 EUR
10+9.58 EUR
100+7.71 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFS5C604NT1G onsemi

Description: NFET SO8FL 60V 287A 1.2MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 10 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS5C604NT1G nach Preis ab 7.32 EUR bis 14.2 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFS5C604NT1G NVMFS5C604NT1G Hersteller : onsemi nvmfs5c604n-d.pdf MOSFETs NFET SO8FL 60V 287A 1.2MO
auf Bestellung 349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.2 EUR
10+9.75 EUR
100+7.83 EUR
1000+7.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C604NT1G NVMFS5C604NT1G Hersteller : ON Semiconductor nvmfs5c604n-d.pdf Trans MOSFET N-CH 60V 40A 5-Pin SO-FL EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C604NT1G NVMFS5C604NT1G Hersteller : onsemi nvmfs5c604n-d.pdf Description: NFET SO8FL 60V 287A 1.2MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 10 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS5C604NT1G Hersteller : ONSEMI nvmfs5c604n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH