auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.87 EUR |
| 10+ | 9.19 EUR |
| 100+ | 7.22 EUR |
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Technische Details NVMFS5C604NT1G onsemi
Description: NFET SO8FL 60V 287A 1.2MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 10 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C604NT1G
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Verfügbarkeit |
Preis |
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NVMFS5C604NT1G | Hersteller : ON Semiconductor |
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| NVMFS5C604NT1G | Hersteller : ON Semiconductor |
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NVMFS5C604NT1G | Hersteller : onsemi |
Description: NFET SO8FL 60V 287A 1.2MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 10 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFS5C604NT1G | Hersteller : onsemi |
Description: NFET SO8FL 60V 287A 1.2MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 287A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 10 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |