
NVMFS5C612NLT1G ON Semiconductor
auf Bestellung 152895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
165+ | 3.25 EUR |
500+ | 2.98 EUR |
1000+ | 2.7 EUR |
10000+ | 2.45 EUR |
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Technische Details NVMFS5C612NLT1G ON Semiconductor
Description: MOSFET N-CH 60V 36A/235A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C612NLT1G nach Preis ab 2.89 EUR bis 7.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMFS5C612NLT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1122000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C612NLT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1122000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C612NLT1G | Hersteller : onsemi |
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auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C612NLT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMFS5C612NLT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMFS5C612NLT1G | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 91nC On-state resistance: 1.36mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 83W Drain current: 250A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5C612NLT1G | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 91nC On-state resistance: 1.36mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Power dissipation: 83W Drain current: 250A Case: DFN5 Pulsed drain current: 900A Kind of channel: enhancement |
Produkt ist nicht verfügbar |