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NVMFS5C612NLT1G

NVMFS5C612NLT1G ON Semiconductor


nvmfs5c612nld.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 38A Automotive AEC-Q101 5-Pin SO-FL EP T/R
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
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500+2.98 EUR
1000+2.7 EUR
10000+2.45 EUR
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Technische Details NVMFS5C612NLT1G ON Semiconductor

Description: MOSFET N-CH 60V 36A/235A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS5C612NLT1G nach Preis ab 2.89 EUR bis 7.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFS5C612NLT1G NVMFS5C612NLT1G Hersteller : onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1122000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+3.32 EUR
3000+3.13 EUR
Mindestbestellmenge: 1500
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NVMFS5C612NLT1G NVMFS5C612NLT1G Hersteller : onsemi nvmfs5c612nl-d.pdf Description: MOSFET N-CH 60V 36A/235A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1122000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
10+5.4 EUR
100+4.37 EUR
500+3.88 EUR
Mindestbestellmenge: 3
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NVMFS5C612NLT1G NVMFS5C612NLT1G Hersteller : onsemi 240E2DF8278D048404F78E32F8BF2A053AEBDDF1E242782DF01DFB8DFB8410F2.pdf MOSFETs NFET SO8FL 60V 235A 1.5MO
auf Bestellung 1430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.6 EUR
10+5.03 EUR
100+3.71 EUR
500+3.45 EUR
1000+2.89 EUR
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NVMFS5C612NLT1G NVMFS5C612NLT1G Hersteller : ON Semiconductor nvmfs5c612nl-d.pdf Trans MOSFET N-CH 60V 38A Automotive 5-Pin(4+Tab) SO-FL T/R
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NVMFS5C612NLT1G NVMFS5C612NLT1G Hersteller : ON Semiconductor nvmfs5c612nld.pdf Trans MOSFET N-CH 60V 38A Automotive AEC-Q101 5-Pin SO-FL EP T/R
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NVMFS5C612NLT1G Hersteller : ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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NVMFS5C612NLT1G Hersteller : ONSEMI nvmfs5c612nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 91nC
On-state resistance: 1.36mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Power dissipation: 83W
Drain current: 250A
Case: DFN5
Pulsed drain current: 900A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH