auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.14 EUR |
| 10+ | 3.40 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.09 EUR |
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Technische Details NVMFS5C645NLWFAFT1G onsemi
Description: MOSFET N-CH 60V 22A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C645NLWFAFT1G nach Preis ab 2.22 EUR bis 5.95 EUR
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NVMFS5C645NLWFAFT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 60V 22A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1019 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C645NLWFAFT1G | Hersteller : ONSEMI |
Description: ONSEMI - NVMFS5C645NLWFAFT1G - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 79W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 2619 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C645NLWFAFT1G | Hersteller : ONSEMI |
Description: ONSEMI - NVMFS5C645NLWFAFT1G - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 79W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2982 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C645NLWFAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 22A Automotive 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |
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NVMFS5C645NLWFAFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 22A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |