NVMFS5C670NLAFT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS5C670NLAFT1G onsemi
Description: MOSFET N-CHANNEL 60V 17A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V, Power Dissipation (Max): 61W (Tc), Vgs(th) (Max) @ Id: 2V @ 53µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C670NLAFT1G nach Preis ab 1.22 EUR bis 3.91 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVMFS5C670NLAFT1G | Hersteller : onsemi |
MOSFETs TRENCH 6 60V NFET |
auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
|
||||||||||||||||
| NVMFS5C670NLAFT1G | Hersteller : ON Semiconductor |
|
auf Bestellung 1245 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
 |
NVMFS5C670NLAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
NVMFS5C670NLAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 17A 5-Pin SO-FL EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
NVMFS5C670NLAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 17A 5-Pin SO-FL EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| NVMFS5C670NLAFT1G | Hersteller : ONSEMI |
NVMFS5C670NLAFT1G SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
NVMFS5C670NLAFT1G | Hersteller : onsemi |
Description: MOSFET N-CHANNEL 60V 17A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |