Produkte > ONSEMI > NVMFS5H663NLT1G
NVMFS5H663NLT1G

NVMFS5H663NLT1G onsemi

nvmfs5h663nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.88 EUR
3000+ 0.82 EUR
Mindestbestellmenge: 1500
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFS5H663NLT1G onsemi

Description: MOSFET N-CH 60V 16.2A/67A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2V @ 56µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS5H663NLT1G nach Preis ab 1.07 EUR bis 1.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVMFS5H663NLT1G NVMFS5H663NLT1G Hersteller : onsemi nvmfs5h663nl-d.pdf Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+1.99 EUR
11+ 1.63 EUR
100+ 1.27 EUR
500+ 1.07 EUR
Mindestbestellmenge: 9
NVMFS5H663NLT1G NVMFS5H663NLT1G Hersteller : ON Semiconductor NVMFS5H663NL-D-1814455.pdf MOSFET T8 60V LOW COSS
auf Bestellung 1335 Stücke:
Lieferzeit 14-28 Tag (e)