NVMFS5H663NLT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.05 EUR |
| 3000+ | 0.98 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS5H663NLT1G onsemi
Description: MOSFET N-CH 60V 16.2A/67A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2V @ 56µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5H663NLT1G nach Preis ab 0.58 EUR bis 3.28 EUR
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NVMFS5H663NLT1G | onsemi |
Description: MOSFET N-CH 60V 16.2A/67A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 56µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5976 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5H663NLT1G | onsemi |
MOSFETs T8 60V LOW COSS |
auf Bestellung 2221 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5H663NLT1G | ON Semiconductor |
MOSFET T8 60V LOW COSS |
auf Bestellung 1335 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS5H663NLT1G | ON Semiconductor |
Trans MOSFET N-CH 60V 16.2A Automotive 5-Pin(4+Tab) SO-FL T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| NVMFS5H663NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 16.2A/67A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 56µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.37 EUR |
| 11+ | 1.94 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.27 EUR |
| NVMFS5H663NLT1G |
|
Hersteller: onsemi
MOSFETs T8 60V LOW COSS
MOSFETs T8 60V LOW COSS
auf Bestellung 2221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.28 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 1.01 EUR |
| 1500+ | 0.95 EUR |
| NVMFS5H663NLT1G |
|
Hersteller: ON Semiconductor
MOSFET T8 60V LOW COSS
MOSFET T8 60V LOW COSS
auf Bestellung 1335 Stücke:
Lieferzeit 10-14 Tag (e)
| NVMFS5H663NLT1G |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 60V 16.2A Automotive 5-Pin(4+Tab) SO-FL T/R
Trans MOSFET N-CH 60V 16.2A Automotive 5-Pin(4+Tab) SO-FL T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
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| 155+ | 1.15 EUR |
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