NVMFS6B85NLWFT1G ON Semiconductor

Description: MOSFET N-CH 100V 5.6A/19A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V, Power Dissipation (Max): 3.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V, Qualification: AEC-Q101.