auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.17 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.87 EUR |
| 250+ | 2.85 EUR |
| 500+ | 2.46 EUR |
| 1500+ | 2.06 EUR |
| 9000+ | 1.90 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS6H801NT1G onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 166W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H801NT1G nach Preis ab 2.06 EUR bis 4.35 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NVMFS6H801NT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 23A/157A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 924 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
NVMFS6H801NT1G | Hersteller : ONSEMI |
Description: ONSEMI - NVMFS6H801NT1G - MOSFET, N-CH, 80V, 157A, 175DEG C, 166W tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: Y-EX Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: Compute Module 3+ Series productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
| NVMFS6H801NT1G | Hersteller : ON Semiconductor |
|
auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
| NVMFS6H801NT1G | Hersteller : ONSEMI |
NVMFS6H801NT1G SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||
|
|
NVMFS6H801NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |