NVMFS6H801NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Technische Details NVMFS6H801NT1G onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 166W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFS6H801NT1G nach Preis ab 2.26 EUR bis 6.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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NVMFS6H801NT1G | ONSEMI |
Description: ONSEMI - NVMFS6H801NT1G - MOSFET, N-CH, 80V, 157A, 175DEG C, 166W tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 157A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 166W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0028ohm directShipCharge: 25 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS6H801NT1G | onsemi |
MOSFET TRENCH 8 80V NFET |
auf Bestellung 3949 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H801NT1G | onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 19351 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H801NT1G | ON Semiconductor |
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auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H801NT1G |
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Hersteller: ONSEMI
Description: ONSEMI - NVMFS6H801NT1G - MOSFET, N-CH, 80V, 157A, 175DEG C, 166W
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 157A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0028ohm
directShipCharge: 25
Description: ONSEMI - NVMFS6H801NT1G - MOSFET, N-CH, 80V, 157A, 175DEG C, 166W
tariffCode: 85412900
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 157A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: N Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0028ohm
directShipCharge: 25
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 2.7 EUR |
| NVMFS6H801NT1G |
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Hersteller: onsemi
MOSFET TRENCH 8 80V NFET
MOSFET TRENCH 8 80V NFET
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.96 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.42 EUR |
| 250+ | 3.39 EUR |
| 500+ | 2.93 EUR |
| 1500+ | 2.45 EUR |
| 9000+ | 2.26 EUR |
| NVMFS6H801NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 19351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.31 EUR |
| 10+ | 4.11 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.48 EUR |
| NVMFS6H801NT1G |
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Hersteller: ON Semiconductor
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)