NVMFS6H801NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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Technische Details NVMFS6H801NT1G onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 166W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFS6H801NT1G nach Preis ab 1.9 EUR bis 5.3 EUR
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NVMFS6H801NT1G | onsemi |
MOSFET TRENCH 8 80V NFET |
auf Bestellung 3949 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H801NT1G | onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFN Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 19351 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H801NT1G | ON Semiconductor |
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auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFS6H801NT1G |
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Hersteller: onsemi
MOSFET TRENCH 8 80V NFET
MOSFET TRENCH 8 80V NFET
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.17 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.87 EUR |
| 250+ | 2.85 EUR |
| 500+ | 2.46 EUR |
| 1500+ | 2.06 EUR |
| 9000+ | 1.9 EUR |
| NVMFS6H801NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 23A/157A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 19351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.4 EUR |
| 500+ | 2.08 EUR |
| NVMFS6H801NT1G |
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Hersteller: ON Semiconductor
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)