auf Bestellung 9602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 3.85 EUR |
| 100+ | 3.12 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.38 EUR |
| 1500+ | 2.24 EUR |
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Technische Details NVMFS6H824NLT1G onsemi
Description: MOSFET N-CH 80V 20A/110A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 3.8W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 140µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H824NLT1G nach Preis ab 2.39 EUR bis 5.86 EUR
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NVMFS6H824NLT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 80V 20A/110A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 140µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 879 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS6H824NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFS6H824NLT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 20A/110A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 140µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V Qualification: AEC-Q101 |
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