NVMFS6H848NLWFT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
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Technische Details NVMFS6H848NLWFT1G onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2V @ 70µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V, Qualification: AEC-Q101.
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| NVMFS6H848NLWFT1G | Hersteller : ONSEMI |
NVMFS6H848NLWFT1G SMD N channel transistors |
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NVMFS6H848NLWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |