NVMFS6H848NLWFT1G ON Semiconductor
| Anzahl | Preis |
|---|---|
| 264+ | 0.55 EUR |
| 281+ | 0.5 EUR |
| 500+ | 0.45 EUR |
| 1500+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS6H848NLWFT1G ON Semiconductor
Description: MOSFET N-CH 80V 13A/59A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc), Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2V @ 70µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H848NLWFT1G nach Preis ab 0.4 EUR bis 2.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NVMFS6H848NLWFT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 80V 13A 5-Pin DFNW EP T/R Automotive AEC-Q101 |
auf Bestellung 2815 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
NVMFS6H848NLWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
NVMFS6H848NLWFT1G | Hersteller : onsemi |
MOSFETs T8 80V LL SO8FL |
auf Bestellung 1496 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
NVMFS6H848NLWFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 13A 5-Pin DFNW EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
NVMFS6H848NLWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||
| NVMFS6H848NLWFT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59A; Idm: 319A; 37W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59A Pulsed drain current: 319A Power dissipation: 37W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |