NVMFS6H848NWFT1G ON Semiconductor

Description: MOSFET N-CH 80V 13A/57A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 4V @ 70µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V.