NVMFS6H852NWFT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 10A/40A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.22 EUR |
| 500+ | 0.96 EUR |
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Technische Details NVMFS6H852NWFT1G onsemi
Description: MOSFET N-CH 80V 10A/40A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 45µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC Anzahl je Verpackung: 1 Stücke |
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NVMFS6H852NWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 10A/40A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 200A; 27W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 200A Power dissipation: 27W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 14.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 13nC |
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