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NVMFS6H858NWFT1G

NVMFS6H858NWFT1G onsemi

nvmfs6h858n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
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Technische Details NVMFS6H858NWFT1G onsemi

Description: MOSFET N-CH 80V 8.4A/29A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc), Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 30µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS6H858NWFT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFS6H858NWFT1G NVMFS6H858NWFT1G onsemi nvmfs6h858n-d.pdf Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G NVMFS6H858NWFT1G onsemi nvmfs6h858n-d.pdf MOSFETs TRENCH 8 80V NFET
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NVMFS6H858NWFT1G ONSEMI nvmfs6h858n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29A; Idm: 137A; 21W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29A
Power dissipation: 21W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 20.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 137A
Gate charge: 8.9nC
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G nvmfs6h858n-d.pdf
NVMFS6H858NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NVMFS6H858NWFT1G nvmfs6h858n-d.pdf
NVMFS6H858NWFT1G
Hersteller: onsemi
MOSFETs TRENCH 8 80V NFET
Produkt ist nicht verfügbar
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NVMFS6H858NWFT1G nvmfs6h858n-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29A; Idm: 137A; 21W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 29A
Power dissipation: 21W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 20.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 137A
Gate charge: 8.9nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH