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NVMFS6H864NLWFT1G

NVMFS6H864NLWFT1G onsemi

nvmfs6h864nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+0.88 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFS6H864NLWFT1G onsemi

Description: MOSFET N-CH 80V 7A/22A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS6H864NLWFT1G nach Preis ab 0.93 EUR bis 2.04 EUR

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NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G Hersteller : onsemi nvmfs6h864nl-d.pdf Description: MOSFET N-CH 80V 7A/22A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.01 EUR
11+ 1.63 EUR
100+ 1.27 EUR
500+ 1.08 EUR
Mindestbestellmenge: 9
NVMFS6H864NLWFT1G NVMFS6H864NLWFT1G Hersteller : onsemi NVMFS6H864NL_D-2319672.pdf MOSFET MOSFET - Power, Single N-Channel, 80 V, 29 m ohm, 22 A - NVMFS6H864NL DFN5 (Pb-Free, Wettable Flanks)
auf Bestellung 9000 Stücke:
Lieferzeit 841-845 Tag (e)
Anzahl Preis ohne MwSt
2+2.04 EUR
10+ 1.83 EUR
100+ 1.42 EUR
500+ 1.18 EUR
1500+ 0.93 EUR
Mindestbestellmenge: 2
NVMFS6H864NLWFT1G Hersteller : ON Semiconductor nvmfs6h864nl-d.pdf
auf Bestellung 1470 Stücke:
Lieferzeit 21-28 Tag (e)
NVMFS6H864NLWFT1G Hersteller : ON Semiconductor nvmfs6h864nl-d.pdf Trans MOSFET N-CH 80V 7A T/R
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