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NVMFS6H864NWFT1G

NVMFS6H864NWFT1G ON Semiconductor

nvmfs6h864n-d.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 80V 6.7A Automotive AEC-Q101 5-Pin SO-FL EP T/R
auf Bestellung 52500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1500+0.64 EUR
Mindestbestellmenge: 1500 Stücke
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Technische Details NVMFS6H864NWFT1G ON Semiconductor

Description: MOSFET N-CH 80V 6.7A/21A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMFS6H864NWFT1G nach Preis ab 0.71 EUR bis 2.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFS6H864NWFT1G NVMFS6H864NWFT1G onsemi nvmfs6h864n-d.pdf Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.82 EUR
3000+0.73 EUR
4500+0.71 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NWFT1G NVMFS6H864NWFT1G onsemi NVMFS6H864N_D-2319690.pdf MOSFET T8 80V SO8FL
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.14 EUR
10+1.92 EUR
100+1.49 EUR
500+1.23 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NWFT1G NVMFS6H864NWFT1G onsemi nvmfs6h864n-d.pdf Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 53920 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.84 EUR
12+1.78 EUR
100+1.2 EUR
500+0.96 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NWFT1G nvmfs6h864n-d.pdf
NVMFS6H864NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.82 EUR
3000+0.73 EUR
4500+0.71 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NWFT1G NVMFS6H864N_D-2319690.pdf
NVMFS6H864NWFT1G
Hersteller: onsemi
MOSFET T8 80V SO8FL
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.14 EUR
10+1.92 EUR
100+1.49 EUR
500+1.23 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NWFT1G nvmfs6h864n-d.pdf
NVMFS6H864NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 53920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
12+1.78 EUR
100+1.2 EUR
500+0.96 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH