| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.09 EUR |
| 10+ | 1.48 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.95 EUR |
| 1500+ | 0.81 EUR |
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Technische Details NVMFS6H864NWFT1G onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, Power Dissipation (Max): 3.5W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H864NWFT1G nach Preis ab 1.33 EUR bis 3.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NVMFS6H864NWFT1G | onsemi |
 Description: MOSFET N-CH 80V 6.7A/21A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMFS6H864NWFT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.17 EUR |
| 11+ | 2 EUR |
| 50+ | 1.5 EUR |
| 100+ | 1.33 EUR |