Produkte > ONSEMI > NVMFWD016N06CT1G
NVMFWD016N06CT1G

NVMFWD016N06CT1G onsemi

NVMFD016N06CD.PDF
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.24 EUR
10+4.06 EUR
100+2.82 EUR
500+2.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFWD016N06CT1G onsemi

Description: MOSFET 2N-CH 60V 9A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 4V @ 25µA, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 3.1W (Ta), 36W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual).

Weitere Produktangebote NVMFWD016N06CT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFWD016N06CT1G NVMFWD016N06CT1G onsemi NVMFD016N06CD.PDF Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD016N06CT1G NVMFWD016N06CT1G onsemi NVMFD016N06CD.PDF MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD016N06CT1G NVMFD016N06CD.PDF
NVMFWD016N06CT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD016N06CT1G NVMFD016N06CD.PDF
NVMFWD016N06CT1G
Hersteller: onsemi
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH