NVMFWD016N06CT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.57 EUR |
| 3000+ | 1.51 EUR |
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Technische Details NVMFWD016N06CT1G onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 4V @ 25µA, Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 3.1W (Ta), 36W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual).
Weitere Produktangebote NVMFWD016N06CT1G nach Preis ab 1.85 EUR bis 4.84 EUR
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NVMFWD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A 8DFN Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.1W (Ta), 36W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 16380 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMFWD016N06CT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 16380 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |