Produkte > ONSEMI > NVMFWD027N10MCLT1G
NVMFWD027N10MCLT1G

NVMFWD027N10MCLT1G onsemi


NVMFD027N10MCL-D.PDF Hersteller: onsemi
Description: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.97 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFWD027N10MCLT1G onsemi

Description: DUAL N-CHANNEL POWER MOSFET100 V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 46W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V, Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 38µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWD027N10MCLT1G nach Preis ab 1.04 EUR bis 1.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMFWD027N10MCLT1G NVMFWD027N10MCLT1G Hersteller : onsemi NVMFD027N10MCL-D.PDF Description: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
13+1.44 EUR
25+1.31 EUR
100+1.16 EUR
250+1.09 EUR
500+1.04 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD027N10MCLT1G NVMFWD027N10MCLT1G Hersteller : onsemi NVMFD027N10MCL-D.PDF MOSFETs Dual N-Channel Power MOSFET 100 V, 28 A, 26 mohm Wettable Flank option
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH