NVMFWS002N10MCLT1G onsemi
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.56 EUR |
| 10+ | 4.31 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.99 EUR |
| 1500+ | 2.53 EUR |
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Technische Details NVMFWS002N10MCLT1G onsemi
Description: PTNG 100V LL SO8FL HE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 194W (Tc), Vgs(th) (Max) @ Id: 3V @ 351µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWS002N10MCLT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFWS002N10MCLT1G | Hersteller : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 177A Pulsed drain current: 900A Power dissipation: 97W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 97nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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NVMFWS002N10MCLT1G | Hersteller : onsemi |
Description: PTNG 100V LL SO8FL HE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFWS002N10MCLT1G | Hersteller : onsemi |
Description: PTNG 100V LL SO8FL HE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 194W (Tc) Vgs(th) (Max) @ Id: 3V @ 351µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMFWS002N10MCLT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 177A Pulsed drain current: 900A Power dissipation: 97W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 97nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |