NVMFWS003P03P8ZT1G onsemi
Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.95 EUR |
| 10+ | 3.88 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFWS003P03P8ZT1G onsemi
Description: PFET SO8FL -30V 3MO, Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V, Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFWS003P03P8ZT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
NVMFWS003P03P8ZT1G | onsemi |
Description: PFET SO8FL -30V 3MO Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFWS003P03P8ZT1G |
|
Hersteller: onsemi
Description: PFET SO8FL -30V 3MO
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: PFET SO8FL -30V 3MO
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH