NVMFWS003P03P8ZT1G ON Semiconductor

Description: PFET SO8FL -30V 3MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V, Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V.