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NVMFWS015N10MCLT1G

NVMFWS015N10MCLT1G onsemi

2EC42991D97DE2D1D0AE14063F3728B3EA8CAA634755FEEE07D57FD387F83D37.pdf Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 47.1A, 12.2mohm
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.43 EUR
10+1.71 EUR
100+1.2 EUR
500+0.95 EUR
1000+0.93 EUR
1500+0.85 EUR
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Technische Details NVMFWS015N10MCLT1G onsemi

Description: PTNG 100V LL NCH SO-8FL WETTABLE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V, Power Dissipation (Max): 3W (Ta), 79W (Tc), Vgs(th) (Max) @ Id: 3V @ 77µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V, Qualification: AEC-Q101.

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NVMFWS015N10MCLT1G NVMFWS015N10MCLT1G Hersteller : onsemi nvmfs015n10mcl-d.pdf Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS015N10MCLT1G NVMFWS015N10MCLT1G Hersteller : ON Semiconductor nvmfs015n10mcl-d.pdf Trans MOSFET N-CH 100V 10.5A Automotive 5-Pin SO-FL EP T/R
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NVMFWS015N10MCLT1G NVMFWS015N10MCLT1G Hersteller : onsemi nvmfs015n10mcl-d.pdf Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
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NVMFWS015N10MCLT1G Hersteller : ONSEMI nvmfs015n10mcl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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