NVMFWS0D4N04XMT1G onsemi
Hersteller: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1500+ | 2.79 EUR |
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Technische Details NVMFWS0D4N04XMT1G onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 519A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: 8-DFN (5x6), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWS0D4N04XMT1G nach Preis ab 3.22 EUR bis 8.11 EUR
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NVMFWS0D4N04XMT1G | Hersteller : onsemi |
MOSFETs 40V T10M IN S08FL GEN 2 PACKAGE |
auf Bestellung 3765 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS0D4N04XMT1G | Hersteller : onsemi |
Description: 40V T10M IN S08FL GEN 2 PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 519A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2393 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS0D4N04XMT1G | Hersteller : ON Semiconductor |
Power MOSFET, Single N-Channel |
Produkt ist nicht verfügbar |
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| NVMFWS0D4N04XMT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 509A; Idm: 900A; 197W; DFNW5 Case: DFNW5 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate charge: 132nC Power dissipation: 197W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 509A Pulsed drain current: 900A On-state resistance: 420µΩ Polarisation: unipolar |
Produkt ist nicht verfügbar |