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NVMFWS0D4N04XMT1G

NVMFWS0D4N04XMT1G onsemi

nvmfws0d4n04xm-d.pdf Hersteller: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.88 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFWS0D4N04XMT1G onsemi

Description: 40V T10M IN S08FL GEN 2 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 519A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: 8-DFN (5x6), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V, Qualification: AEC-Q101.

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NVMFWS0D4N04XMT1G NVMFWS0D4N04XMT1G Hersteller : onsemi nvmfws0d4n04xm-d.pdf Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
10+5.21 EUR
100+3.71 EUR
500+3.53 EUR
Mindestbestellmenge: 3
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NVMFWS0D4N04XMT1G Hersteller : onsemi nvmfws0d4n04xm-d.pdf MOSFETs 40V T10M IN S08FL GEN 2 PACKAGE
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.66 EUR
10+5.76 EUR
100+4.1 EUR
500+3.89 EUR
1000+3.48 EUR
1500+3.26 EUR
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NVMFWS0D4N04XMT1G Hersteller : ON Semiconductor nvmfws0d4n04xm-d.pdf NVMFWS0D4N04XMT1G
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NVMFWS0D4N04XMT1G Hersteller : ON Semiconductor nvmfws0d4n04xm-d.pdf Power MOSFET, Single N-Channel
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NVMFWS0D4N04XMT1G Hersteller : ONSEMI nvmfws0d4n04xm-d.pdf NVMFWS0D4N04XMT1G SMD N channel transistors
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