auf Bestellung 1500 Stücke:
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| Anzahl | Preis |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.39 EUR |
| 1500+ | 1.32 EUR |
| 4500+ | 1.28 EUR |
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Technische Details NVMFWS1D1N04XMT1G onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40, Packaging: Bulk, Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 120µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V, Qualification: AEC-Q101.
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NVMFWS1D1N04XMT1G | Hersteller : onsemi |
 Description: SINGLE N-CHANNEL POWER MOSFET 40Packaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V Qualification: AEC-Q101 |
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