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NVMFWS1D5N08XT1G

NVMFWS1D5N08XT1G onsemi

nvmfws1d5n08x-d.pdf Hersteller: onsemi
Description: T10S 80V SG NCH MOSFET SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
10+4.2 EUR
100+2.96 EUR
Mindestbestellmenge: 3
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Technische Details NVMFWS1D5N08XT1G onsemi

Description: T10S 80V SG NCH MOSFET SO8FL HE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 253A (Tc), Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 330µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V, Qualification: AEC-Q101.

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NVMFWS1D5N08XT1G NVMFWS1D5N08XT1G Hersteller : onsemi nvmfws1d5n08x-d.pdf MOSFETs Single N-Channel Power MOSFET 80V, 253 A, 1.5 mohm
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Lieferzeit 10-14 Tag (e)
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100+3.77 EUR
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NVMFWS1D5N08XT1G NVMFWS1D5N08XT1G Hersteller : ON Semiconductor nvmfws1d5n08x-d.pdf Trans MOSFET N-CH 80V 253A 5-Pin SO-FL EP T/R Automotive AEC-Q101
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NVMFWS1D5N08XT1G Hersteller : ONSEMI nvmfws1d5n08x-d.pdf NVMFWS1D5N08XT1G SMD N channel transistors
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NVMFWS1D5N08XT1G NVMFWS1D5N08XT1G Hersteller : onsemi nvmfws1d5n08x-d.pdf Description: T10S 80V SG NCH MOSFET SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 253A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 50A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 330µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5880 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH