NVMFWS2D1N08XT1G onsemi
Hersteller: onsemiDescription: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 213µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.7 EUR |
| 3000+ | 1.66 EUR |
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Technische Details NVMFWS2D1N08XT1G onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 181A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 213µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWS2D1N08XT1G nach Preis ab 1.95 EUR bis 5.19 EUR
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NVMFWS2D1N08XT1G | Hersteller : onsemi |
MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF |
auf Bestellung 1765 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS2D1N08XT1G | Hersteller : onsemi |
Description: T10 80V STD NCH MOSFET SO8FL PRE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 43A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 213µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 27268 Stücke: Lieferzeit 10-14 Tag (e) |
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