NVMFWS2D3N04XMT1G onsemi
auf Bestellung 1393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.51 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1.00 EUR |
| 1000+ | 0.81 EUR |
| 1500+ | 0.76 EUR |
| 3000+ | 0.73 EUR |
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Technische Details NVMFWS2D3N04XMT1G onsemi
Description: 40V T10M IN S08FL PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc), Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWS2D3N04XMT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFWS2D3N04XMT1G | Hersteller : ONSEMI |
 NVMFWS2D3N04XMT1G SMD N channel transistors |
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NVMFWS2D3N04XMT1G | Hersteller : onsemi |
Description: 40V T10M IN S08FL PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFWS2D3N04XMT1G | Hersteller : onsemi |
Description: 40V T10M IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 20A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |