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NVMFWS2D5N08XT1G

NVMFWS2D5N08XT1G onsemi

nvmfws2d5n08x-d.pdf Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.70 EUR
3000+1.64 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFWS2D5N08XT1G onsemi

Description: T10 80V STD NCH MOSFET SO8FL PRE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 156A (Tc), Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V, Power Dissipation (Max): 133W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 184µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V, Qualification: AEC-Q101.

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NVMFWS2D5N08XT1G NVMFWS2D5N08XT1G Hersteller : onsemi NVMFWS2D5N08X_D-3450375.pdf MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
auf Bestellung 1345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.12 EUR
10+3.43 EUR
100+2.73 EUR
250+2.52 EUR
500+2.27 EUR
1000+1.95 EUR
1500+1.85 EUR
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NVMFWS2D5N08XT1G NVMFWS2D5N08XT1G Hersteller : onsemi nvmfws2d5n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL PRE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 13470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.21 EUR
10+3.40 EUR
100+2.36 EUR
500+1.92 EUR
Mindestbestellmenge: 4
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NVMFWS2D5N08XT1G Hersteller : ON Semiconductor nvmfws2d5n08x-d.pdf NVMFWS2D5N08XT1G
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NVMFWS2D5N08XT1G Hersteller : ONSEMI nvmfws2d5n08x-d.pdf NVMFWS2D5N08XT1G SMD N channel transistors
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