NVMFWS2D5N08XT1G onsemi
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.7 EUR |
| 3000+ | 1.64 EUR |
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Technische Details NVMFWS2D5N08XT1G onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Vgs(th) (Max) @ Id: 3.6V @ 184µA, Power Dissipation (Max): 133W (Tc), Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V, Current - Continuous Drain (Id) @ 25°C: 156A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMFWS2D5N08XT1G nach Preis ab 1.78 EUR bis 5.21 EUR
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NVMFWS2D5N08XT1G | onsemi |
MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF |
auf Bestellung 22063 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS2D5N08XT1G | onsemi |
Description: T10 80V STD NCH MOSFET SO8FL PRE Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.6V @ 184µA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 156A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 13470 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS2D5N08XT1G |
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Hersteller: onsemi
MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF
auf Bestellung 22063 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.17 EUR |
| 10+ | 3.36 EUR |
| 100+ | 2.46 EUR |
| 500+ | 2.06 EUR |
| 1000+ | 1.9 EUR |
| 1500+ | 1.78 EUR |
| NVMFWS2D5N08XT1G |
|
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL PRE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: T10 80V STD NCH MOSFET SO8FL PRE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 156A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 13470 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.21 EUR |
| 10+ | 3.4 EUR |
| 100+ | 2.36 EUR |
| 500+ | 1.92 EUR |