NVMFWS3D0P04M8LT1G onsemi

Description: MV8 P INITIAL PROGRAM, Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Vgs(th) (Max) @ Id: 2.4V @ 2mA, Power Dissipation (Max): 3.9W (Ta), 171W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, 5 Leads, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.