NVMFWS3D0P04M8LT1G onsemi
Hersteller: onsemiDescription: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Power Dissipation (Max): 3.9W (Ta), 171W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1185 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.54 EUR |
| 500+ | 2.25 EUR |
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Technische Details NVMFWS3D0P04M8LT1G onsemi
Description: MV8 P INITIAL PROGRAM, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V, Power Dissipation (Max): 3.9W (Ta), 171W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 2mA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWS3D0P04M8LT1G nach Preis ab 1.87 EUR bis 5.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFWS3D0P04M8LT1G | Hersteller : onsemi |
MOSFETs Power MOSFET, Single P-Channel, -40 V, 2.7 mohm, -183 A Wettable Option |
auf Bestellung 681 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFWS3D0P04M8LT1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 40V 28A Automotive 5-Pin SO-FL EP T/R |
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NVMFWS3D0P04M8LT1G | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 40V 28A Automotive AEC-Q101 5-Pin SO-FL EP T/R |
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| NVMFWS3D0P04M8LT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -183A Pulsed drain current: -900A Power dissipation: 86W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFWS3D0P04M8LT1G | Hersteller : onsemi |
Description: MV8 P INITIAL PROGRAM Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 183A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V Power Dissipation (Max): 3.9W (Ta), 171W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 2mA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMFWS3D0P04M8LT1G | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -183A; Idm: -900A; 86W; DFNW5 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -183A Pulsed drain current: -900A Power dissipation: 86W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 124nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |