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NVMFWS3D6N10MCLT1G

NVMFWS3D6N10MCLT1G onsemi

nvmfs3d6n10mcl-d.pdf Hersteller: onsemi
Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+2.92 EUR
3000+ 2.75 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFWS3D6N10MCLT1G onsemi

Description: PTNG 100V LL NCH SO-8FL WETTABLE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V, Power Dissipation (Max): 3.2W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 3V @ 270µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWS3D6N10MCLT1G nach Preis ab 3.34 EUR bis 5.74 EUR

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NVMFWS3D6N10MCLT1G NVMFWS3D6N10MCLT1G Hersteller : onsemi nvmfs3d6n10mcl-d.pdf Description: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.65 EUR
10+ 4.74 EUR
100+ 3.83 EUR
500+ 3.41 EUR
Mindestbestellmenge: 4
NVMFWS3D6N10MCLT1G NVMFWS3D6N10MCLT1G Hersteller : onsemi NVMFS3D6N10MCL_D-2319758.pdf MOSFET PTNG 100V LL NCH SO-8FL WETTABLE FLANK FOR AUTOMOTIVE MARKET
auf Bestellung 13795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.74 EUR
10+ 4.82 EUR
25+ 4.79 EUR
100+ 3.91 EUR
250+ 3.85 EUR
500+ 3.47 EUR
1000+ 3.34 EUR
NVMFWS3D6N10MCLT1G Hersteller : ON Semiconductor nvmfs3d6n10mcl-d.pdf Single N Channel Power MOSFET 100 V, 131 A, 3.6m
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