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NVMFWS4D0N04XMT1G

NVMFWS4D0N04XMT1G onsemi

nvmfws4d0n04xm-d.pdf Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.64 EUR
3000+0.62 EUR
4500+0.61 EUR
7500+0.6 EUR
15000+0.59 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFWS4D0N04XMT1G onsemi

Description: SINGLE N-CHANNEL POWER MOSFET 40, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V, Power Dissipation (Max): 43W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 30µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V, Qualification: AEC-Q101.

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NVMFWS4D0N04XMT1G NVMFWS4D0N04XMT1G Hersteller : onsemi nvmfws4d0n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 67456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
19+0.95 EUR
25+0.86 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
Mindestbestellmenge: 14
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NVMFWS4D0N04XMT1G NVMFWS4D0N04XMT1G Hersteller : onsemi onsemi_02-27-2025_NVMFWS4D0N04XM-D.pdf MOSFETs 40V T10M IN SO8FL PACKAGE
auf Bestellung 2838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.43 EUR
10+1.54 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.75 EUR
1500+0.66 EUR
Mindestbestellmenge: 2
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