Technische Details NVMJD012N06CLTWG ON Semiconductor
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 42W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V, Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMJD012N06CLTWG
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| NVMJD012N06CLTWG | Hersteller : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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NVMJD012N06CLTWG | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-LFPAK Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
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NVMJD012N06CLTWG | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 42W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJD012N06CLTWG | Hersteller : onsemi |
MOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE |
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| NVMJD012N06CLTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement |
Produkt ist nicht verfügbar |