NVMJD012N06CLTWG onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMJD012N06CLTWG onsemi
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK, Part Status: Active, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 3.2W (Ta), 42W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote NVMJD012N06CLTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
NVMJD012N06CLTWG | onsemi |
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-LFPAK Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 3.2W (Ta), 42W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NVMJD012N06CLTWG | onsemi |
MOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMJD012N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMJD012N06CLTWG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.2W (Ta), 42W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMJD012N06CLTWG |
|
Hersteller: onsemi
MOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE
MOSFETs T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMJD012N06CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH