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NVMJS0D9N04CLTWG

NVMJS0D9N04CLTWG onsemi

nvmjs0d9n04cl-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 40V 50A/330A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 190µA
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
auf Bestellung 2987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
10+3.18 EUR
100+2.3 EUR
500+1.92 EUR
1000+1.87 EUR
Mindestbestellmenge: 4
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Technische Details NVMJS0D9N04CLTWG onsemi

Description: MOSFET N-CH 40V 50A/330A 8LFPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2V @ 190µA, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).

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NVMJS0D9N04CLTWG Hersteller : ONN nvmjs0d9n04cl-d.pdf
auf Bestellung 2920 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH