NVMJS1D6N06CLTWG ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.36mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.36mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details NVMJS1D6N06CLTWG ONSEMI
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; LFPAK8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 250A, Pulsed drain current: 900A, Power dissipation: 83W, Case: LFPAK8, Gate-source voltage: ±20V, On-state resistance: 1.36mΩ, Mounting: SMD, Gate charge: 91nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NVMJS1D6N06CLTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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NVMJS1D6N06CLTWG | Hersteller : onsemi | MOSFETs T6 60V LL LFPAK |
Produkt ist nicht verfügbar |
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| NVMJS1D6N06CLTWG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 250A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 1.36mΩ Mounting: SMD Gate charge: 91nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |