| Anzahl | Preis |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.28 EUR |
| 3000+ | 1.16 EUR |
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Technische Details NVMJS2D5N06CLTWG onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 2V @ 135µA, Power Dissipation (Max): 3.9W (Ta), 113W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMJS2D5N06CLTWG nach Preis ab 1.4 EUR bis 3.96 EUR
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NVMJS2D5N06CLTWG | onsemi |
 Description: MOSFET N-CH 60V 31A/164A 8LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2V @ 135µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2787 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMJS2D5N06CLTWG | ON Semiconductor |
MOSFET 60V 2.4 mOhm 155A Single N-Channel |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMJS2D5N06CLTWG |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 31A/164A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2787 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.96 EUR |
| 10+ | 2.55 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.4 EUR |
| NVMJS2D5N06CLTWG |
|
Hersteller: ON Semiconductor
MOSFET 60V 2.4 mOhm 155A Single N-Channel
MOSFET 60V 2.4 mOhm 155A Single N-Channel
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)