NVMJST0D9N04CTXG onsemi
Hersteller: onsemiDescription: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 531A (Tc)
Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 190µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2568 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.23 EUR |
| 10+ | 4.69 EUR |
| 25+ | 4.03 EUR |
| 100+ | 3.28 EUR |
| 250+ | 2.91 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.5 EUR |
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Technische Details NVMJST0D9N04CTXG onsemi
Description: TRENCH 6 40V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 531A (Tc), Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V, Power Dissipation (Max): 555W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 190µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NVMJST0D9N04CTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 531A; Idm: 900A; 278W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 531A Pulsed drain current: 900A Power dissipation: 278W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.07mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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NVMJST0D9N04CTXG | Hersteller : onsemi |
Description: TRENCH 6 40V LFPAK 5X7 Packaging: Tape & Reel (TR) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 531A (Tc) Rds On (Max) @ Id, Vgs: 1.07mOhm @ 50A, 10V Power Dissipation (Max): 555W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 190µA Supplier Device Package: 10-TCPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJST0D9N04CTXG | Hersteller : onsemi |
MOSFETs Single N-Channel Power MOSFET 40V, 300A, 1 mohm on Top Cool Package |
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| NVMJST0D9N04CTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 531A; Idm: 900A; 278W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 531A Pulsed drain current: 900A Power dissipation: 278W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.07mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |