NVMJST1D4N06CLTXG onsemi
auf Bestellung 7161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.2 EUR |
| 10+ | 4.05 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.66 EUR |
| 1000+ | 2.52 EUR |
| 3000+ | 2.13 EUR |
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Technische Details NVMJST1D4N06CLTXG onsemi
Description: TRENCH 6 60V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V, Power Dissipation (Max): 5.3W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 10-TCPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMJST1D4N06CLTXG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| NVMJST1D4N06CLTXG | Hersteller : ON Semiconductor |
 TRENCH 6 60V LFPAK 5x7 |
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| NVMJST1D4N06CLTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.49mΩ Mounting: SMD Gate charge: 92.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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NVMJST1D4N06CLTXG | Hersteller : onsemi |
Description: TRENCH 6 60V LFPAK 5X7 Packaging: Tape & Reel (TR) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 10-TCPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJST1D4N06CLTXG | Hersteller : onsemi |
Description: TRENCH 6 60V LFPAK 5X7 Packaging: Cut Tape (CT) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V Power Dissipation (Max): 5.3W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 10-TCPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMJST1D4N06CLTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 198A Pulsed drain current: 900A Power dissipation: 58W Case: TCPAK10 Gate-source voltage: ±20V On-state resistance: 1.49mΩ Mounting: SMD Gate charge: 92.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |