Produkte > ONSEMI > NVMJST1D4N06CLTXG
NVMJST1D4N06CLTXG

NVMJST1D4N06CLTXG onsemi


nvmjst1d4n06cl-d.pdf Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 60V, 198, 1.49 mohm on Top Cool Package
auf Bestellung 7209 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.2 EUR
10+4.05 EUR
100+2.99 EUR
500+2.66 EUR
1000+2.52 EUR
3000+2.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMJST1D4N06CLTXG onsemi

Description: TRENCH 6 60V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc), Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V, Power Dissipation (Max): 5.3W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 10-TCPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMJST1D4N06CLTXG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NVMJST1D4N06CLTXG Hersteller : ON Semiconductor nvmjst1d4n06cl-d.pdf TRENCH 6 60V LFPAK 5x7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D4N06CLTXG Hersteller : ONSEMI nvmjst1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D4N06CLTXG NVMJST1D4N06CLTXG Hersteller : onsemi nvmjst1d4n06cl-d.pdf Description: TRENCH 6 60V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D4N06CLTXG NVMJST1D4N06CLTXG Hersteller : onsemi nvmjst1d4n06cl-d.pdf Description: TRENCH 6 60V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 1.49mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D4N06CLTXG Hersteller : ONSEMI nvmjst1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH