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NVMJST1D6N04CTXG

NVMJST1D6N04CTXG onsemi

nvmjst1d6n04c-d.pdf Hersteller: onsemi
Description: TRENCH 6 40V LFPAK 5X7
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.7 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMJST1D6N04CTXG onsemi

Description: TRENCH 6 40V LFPAK 5X7, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 314A (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMJST1D6N04CTXG nach Preis ab 1.79 EUR bis 5.46 EUR

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NVMJST1D6N04CTXG NVMJST1D6N04CTXG Hersteller : onsemi nvmjst1d6n04c-d.pdf Description: TRENCH 6 40V LFPAK 5X7
Packaging: Cut Tape (CT)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.46 EUR
10+3.5 EUR
25+2.98 EUR
100+2.4 EUR
250+2.11 EUR
500+1.94 EUR
1000+1.79 EUR
Mindestbestellmenge: 4
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NVMJST1D6N04CTXG Hersteller : ON Semiconductor nvmjst1d6n04c-d.pdf NVMJST1D6N04CTXG
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NVMJST1D6N04CTXG NVMJST1D6N04CTXG Hersteller : onsemi NVMJST1D6N04C-D.PDF MOSFETs Single N-Channel Power MOSFET 40V, 319A, 1.65 mohm on top Cool Package
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NVMJST1D6N04CTXG Hersteller : ONSEMI nvmjst1d6n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 314A; Idm: 900A; 150W; TCPAK10
Case: TCPAK10
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 1.65mΩ
Drain-source voltage: 40V
Drain current: 314A
Power dissipation: 150W
Pulsed drain current: 900A
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