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NVMJST1D6N04CTXG

NVMJST1D6N04CTXG onsemi

nvmjst1d6n04c-d.pdf
Hersteller: onsemi
Description: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.7 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMJST1D6N04CTXG onsemi

Description: TRENCH 6 40V LFPAK 5X7, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 10-TCPAK, Vgs(th) (Max) @ Id: 3.5V @ 130µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 314A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote NVMJST1D6N04CTXG nach Preis ab 1.79 EUR bis 5.46 EUR

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NVMJST1D6N04CTXG NVMJST1D6N04CTXG onsemi nvmjst1d6n04c-d.pdf Description: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5740 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.46 EUR
10+3.5 EUR
25+2.98 EUR
100+2.4 EUR
250+2.11 EUR
500+1.94 EUR
1000+1.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST1D6N04CTXG nvmjst1d6n04c-d.pdf
NVMJST1D6N04CTXG
Hersteller: onsemi
Description: TRENCH 6 40V LFPAK 5X7
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 314A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.46 EUR
10+3.5 EUR
25+2.98 EUR
100+2.4 EUR
250+2.11 EUR
500+1.94 EUR
1000+1.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH