Technische Details NVMJST2D1N08XTXG onsemi
Description: SINGLE N-CHANNEL POWERTRENCH T10, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 10-TCPAK, Power Dissipation (Max): 454W (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 334A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V.
Weitere Produktangebote NVMJST2D1N08XTXG nach Preis ab 3.25 EUR bis 7.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NVMJST2D1N08XTXG | onsemi |
 Description: SINGLE N-CHANNEL POWERTRENCH T10Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 10-TCPAK Power Dissipation (Max): 454W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 334A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 372 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMJST2D1N08XTXG |
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Hersteller: onsemi
Description: SINGLE N-CHANNEL POWERTRENCH T10
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWERTRENCH T10
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.14 EUR |
| 10+ | 4.65 EUR |
| 50+ | 3.59 EUR |
| 100+ | 3.25 EUR |