NVMJST2D1N08XTXG onsemi
Hersteller: onsemiDescription: SINGLE N-CHANNEL POWERTRENCH T10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Power Dissipation (Max): 454W (Tc)
Supplier Device Package: 10-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMJST2D1N08XTXG onsemi
Description: SINGLE N-CHANNEL POWERTRENCH T10, Packaging: Tape & Reel (TR), Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 334A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Power Dissipation (Max): 454W (Tc), Supplier Device Package: 10-TCPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V.
Weitere Produktangebote NVMJST2D1N08XTXG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
NVMJST2D1N08XTXG | Hersteller : onsemi |
Description: SINGLE N-CHANNEL POWERTRENCH T10 Packaging: Cut Tape (CT) Package / Case: 10-PowerLSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 334A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 454W (Tc) Supplier Device Package: 10-TCPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V |
Produkt ist nicht verfügbar |
|
 |
NVMJST2D1N08XTXG | Hersteller : onsemi |
MOSFETs Single N-Channel PowerTrench T10 80V, 299A, 2.1 mohm on Top Cool Package |
Produkt ist nicht verfügbar |