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NVMJST2D1N08XTXG onsemi


NVMJST2D1N08X-Datasheet.pdf
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWERTRENCH T10
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
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Technische Details NVMJST2D1N08XTXG onsemi

Description: SINGLE N-CHANNEL POWERTRENCH T10, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: 10-TCPAK, Power Dissipation (Max): 454W (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 334A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V.

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NVMJST2D1N08XTXG NVMJST2D1N08XTXG onsemi NVMJST2D1N08X-Datasheet.pdf Description: SINGLE N-CHANNEL POWERTRENCH T10
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST2D1N08XTXG NVMJST2D1N08XTXG onsemi NVMJST2D1N08X-Datasheet.pdf MOSFETs T10 80V SG TCPAK 5X7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST2D1N08XTXG NVMJST2D1N08X-Datasheet.pdf
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWERTRENCH T10
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 10-TCPAK
Power Dissipation (Max): 454W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMJST2D1N08XTXG NVMJST2D1N08X-Datasheet.pdf
Hersteller: onsemi
MOSFETs T10 80V SG TCPAK 5X7
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH