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NVMJST2D6N08HTXG

NVMJST2D6N08HTXG onsemi

nvmjst2d6n08h-d.pdf Hersteller: onsemi
Description: TRENCH 8 80V LFPAK 5X7
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.57 EUR
10+4.92 EUR
25+4.23 EUR
100+3.46 EUR
250+3.07 EUR
500+2.84 EUR
Mindestbestellmenge: 3
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Technische Details NVMJST2D6N08HTXG onsemi

Description: TRENCH 8 80V LFPAK 5X7, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: 10-PowerLSOP (0.209", 5.30mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V, Power Dissipation (Max): 5.3W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 10-TCPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMJST2D6N08HTXG Hersteller : onsemi NVMJST2D6N08H_D-3082564.pdf MOSFETs TRENCH 8 80V LFPAK 5X7
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.94 EUR
10+5.21 EUR
25+4.52 EUR
100+3.71 EUR
250+3.33 EUR
500+3.06 EUR
1000+2.99 EUR
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NVMJST2D6N08HTXG Hersteller : ON Semiconductor nvmjst2d6n08h-d.pdf MOSFET-Power Single N-Channel Automotive AEC-Q101
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NVMJST2D6N08HTXG Hersteller : ONSEMI nvmjst2d6n08h-d.pdf NVMJST2D6N08HTXG SMD N channel transistors
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NVMJST2D6N08HTXG NVMJST2D6N08HTXG Hersteller : onsemi nvmjst2d6n08h-d.pdf Description: TRENCH 8 80V LFPAK 5X7
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 10-PowerLSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 131.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 5.3W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 10-TCPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH