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NVMS5P02R2G

NVMS5P02R2G onsemi

NTMS5P02R2_D-2319237.pdf Hersteller: onsemi
MOSFET PFET S08S 20V 5.4A 0.033R
auf Bestellung 5247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.49 EUR
10+ 1.28 EUR
100+ 1.07 EUR
500+ 0.96 EUR
1000+ 0.79 EUR
2500+ 0.74 EUR
5000+ 0.7 EUR
Mindestbestellmenge: 2
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Technische Details NVMS5P02R2G onsemi

Description: MOSFET P-CH 20V 3.95A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-SOIC, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V.

Weitere Produktangebote NVMS5P02R2G nach Preis ab 0.93 EUR bis 2.04 EUR

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NVMS5P02R2G NVMS5P02R2G Hersteller : onsemi ntms5p02r2-d.pdf Description: MOSFET P-CH 20V 3.95A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
10+ 1.82 EUR
100+ 1.42 EUR
500+ 1.17 EUR
1000+ 0.93 EUR
Mindestbestellmenge: 9
NVMS5P02R2G NVMS5P02R2G Hersteller : ON Semiconductor ntms5p02r2-d.pdf Trans MOSFET P-CH 20V 7.05A Automotive 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
NVMS5P02R2G NVMS5P02R2G Hersteller : onsemi ntms5p02r2-d.pdf Description: MOSFET P-CH 20V 3.95A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-SOIC
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Produkt ist nicht verfügbar