| Anzahl | Preis |
|---|---|
| 2+ | 1.5 EUR |
| 10+ | 1.28 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.81 EUR |
| 2500+ | 0.73 EUR |
| 5000+ | 0.72 EUR |
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Technische Details NVMS5P02R2G onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote NVMS5P02R2G nach Preis ab 0.93 EUR bis 2.04 EUR
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NVMS5P02R2G | onsemi |
 Description: MOSFET P-CH 20V 3.95A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.25V @ 250µA Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4615 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMS5P02R2G | ONN |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMS5P02R2G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 10+ | 1.82 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.93 EUR |
| NVMS5P02R2G |
|
Hersteller: ONN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH