Technische Details NVMTS0D4N04CLTXG ON Semiconductor
Description: MOSFET N-CH 40V 553.8A 8DFNW, Supplier Device Package: 8-DFNW (8.3x8.4), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Ta), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active.
Weitere Produktangebote NVMTS0D4N04CLTXG nach Preis ab 9.82 EUR bis 22.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NVMTS0D4N04CLTXG | onsemi |
 Description: MOSFET N-CH 40V 553.8A 8DFNWSupplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CLTXG | onsemi |
Description: MOSFET N-CH 40V 553.8A 8DFNW Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Ta) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) FET Type: N-Channel Qualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V |
auf Bestellung 17242 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMTS0D4N04CLTXG | ONN |
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auf Bestellung 887 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMTS0D4N04CLTXG |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET N-CH 40V 553.8A 8DFNW
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 9.82 EUR |
| NVMTS0D4N04CLTXG |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Description: MOSFET N-CH 40V 553.8A 8DFNW
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
auf Bestellung 17242 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.04 EUR |
| 10+ | 15.26 EUR |
| 100+ | 12.02 EUR |
| NVMTS0D4N04CLTXG |
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Hersteller: ONN
auf Bestellung 887 Stücke:
Lieferzeit 21-28 Tag (e)