
NVMTS0D4N04CLTXG ON Semiconductor
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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3000+ | 7.77 EUR |
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Technische Details NVMTS0D4N04CLTXG ON Semiconductor
Description: MOSFET N-CH 40V 553.8A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS0D4N04CLTXG nach Preis ab 8.07 EUR bis 16.53 EUR
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NVMTS0D4N04CLTXG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CLTXG | Hersteller : onsemi |
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auf Bestellung 1541 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CLTXG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16895 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CLTXG | Hersteller : ON Semiconductor |
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NVMTS0D4N04CLTXG | Hersteller : ON Semiconductor |
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NVMTS0D4N04CLTXG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMTS0D4N04CLTXG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 553.8A Pulsed drain current: 900A Power dissipation: 122W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMTS0D4N04CLTXG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 553.8A Pulsed drain current: 900A Power dissipation: 122W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |