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NVMTS0D4N04CLTXG

NVMTS0D4N04CLTXG ON Semiconductor

nvmts0d4n04cl-d.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 40V 79.8A 8-Pin TDFNW EP T/R Automotive AEC-Q101
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Lieferzeit 14-21 Tag (e)
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3000+9.58 EUR
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Technische Details NVMTS0D4N04CLTXG ON Semiconductor

Description: MOSFET N-CH 40V 553.8A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V, Qualification: AEC-Q101.

Weitere Produktangebote NVMTS0D4N04CLTXG nach Preis ab 10.64 EUR bis 23.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG onsemi nvmts0d4n04cl-d.pdf Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+10.64 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG onsemi nvmts0d4n04cl-d.pdf MOSFETs AFSM T6 40V LL NCH
auf Bestellung 14743 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.04 EUR
10+17.17 EUR
100+14.3 EUR
500+12.73 EUR
1000+11.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG NVMTS0D4N04CLTXG onsemi nvmts0d4n04cl-d.pdf Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.43 EUR
10+16.28 EUR
50+13.23 EUR
100+13.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG nvmts0d4n04cl-d.pdf
NVMTS0D4N04CLTXG
Hersteller: onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+10.64 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG nvmts0d4n04cl-d.pdf
NVMTS0D4N04CLTXG
Hersteller: onsemi
MOSFETs AFSM T6 40V LL NCH
auf Bestellung 14743 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.04 EUR
10+17.17 EUR
100+14.3 EUR
500+12.73 EUR
1000+11.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CLTXG nvmts0d4n04cl-d.pdf
NVMTS0D4N04CLTXG
Hersteller: onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.43 EUR
10+16.28 EUR
50+13.23 EUR
100+13.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH