NVMTS0D4N04CLTXG onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 7.96 EUR |
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Technische Details NVMTS0D4N04CLTXG onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS0D4N04CLTXG nach Preis ab 8.41 EUR bis 16.26 EUR
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NVMTS0D4N04CLTXG | Hersteller : onsemi |
MOSFETs Single N-Channel Power MOSFET 40V, 553.8A, 0.4mohm |
auf Bestellung 1556 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CLTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 553.8A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 41352 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CLTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 79.8A Automotive 8-Pin DFNW EP T/R |
Produkt ist nicht verfügbar |
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NVMTS0D4N04CLTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 79.8A Automotive 8-Pin TDFNW EP T/R |
Produkt ist nicht verfügbar |
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NVMTS0D4N04CLTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 79.8A Automotive 8-Pin TDFNW EP T/R |
Produkt ist nicht verfügbar |
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| NVMTS0D4N04CLTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Gate charge: 163nC On-state resistance: 0.4mΩ Power dissipation: 122W Gate-source voltage: ±20V Drain current: 553.8A Drain-source voltage: 40V Pulsed drain current: 900A Case: DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NVMTS0D4N04CLTXG | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Gate charge: 163nC On-state resistance: 0.4mΩ Power dissipation: 122W Gate-source voltage: ±20V Drain current: 553.8A Drain-source voltage: 40V Pulsed drain current: 900A Case: DFNW8 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |