NVMTS0D4N04CTXG ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 7.77 EUR |
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Technische Details NVMTS0D4N04CTXG ON Semiconductor
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc), Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V, Power Dissipation (Max): 5W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS0D4N04CTXG nach Preis ab 8.16 EUR bis 17.07 EUR
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NVMTS0D4N04CTXG | Hersteller : onsemi |
 Description: MOSFET N-CH 40V 79.8A/558A 8DFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D4N04CTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5651 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMTS0D4N04CTXG | Hersteller : ON Semiconductor |
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auf Bestellung 1050 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMTS0D4N04CTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 78.9A Automotive 8-Pin DFNW EP T/R |
Produkt ist nicht verfügbar |
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NVMTS0D4N04CTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 79.8A 8-Pin TDFNW EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMTS0D4N04CTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 79.8A 8-Pin TDFNW EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMTS0D4N04CTXG | Hersteller : onsemi |
MOSFETs AFSM T6 40V SG NCH |
Produkt ist nicht verfügbar |