auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.22 EUR |
| 10+ | 9.47 EUR |
| 100+ | 7.88 EUR |
| 500+ | 7.87 EUR |
| 1000+ | 7.2 EUR |
| 3000+ | 6.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMTS0D6N04CTXG onsemi
Description: MOSFET N-CH 40V 533A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 533A (Tc), Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS0D6N04CTXG nach Preis ab 7.85 EUR bis 13.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMTS0D6N04CTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 533A 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2380 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS0D6N04CTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 76A Automotive 8-Pin DFNW EP T/R |
Produkt ist nicht verfügbar |
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NVMTS0D6N04CTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 76A 8-Pin TDFNW EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMTS0D6N04CTXG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 76A 8-Pin TDFNW EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMTS0D6N04CTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 533A 8DFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| NVMTS0D6N04CTXG | Hersteller : ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 533A; Idm: 900A; 122.7W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 533A Pulsed drain current: 900A Power dissipation: 122.7W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 480µΩ Mounting: SMD Gate charge: 187nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |


