| Anzahl | Preis |
|---|---|
| 1+ | 15.26 EUR |
| 10+ | 10.47 EUR |
| 100+ | 7.88 EUR |
| 1000+ | 7.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMTS0D6N04CTXG onsemi
Description: MOSFET N-CH 40V 533A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 533A (Tc), Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS0D6N04CTXG nach Preis ab 7.88 EUR bis 15.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVMTS0D6N04CTXG | onsemi |
Description: MOSFET N-CH 40V 533A 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2159 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NVMTS0D6N04CTXG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 533A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 533A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 533A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.26 EUR |
| 10+ | 10.47 EUR |
| 100+ | 7.88 EUR |


