NVMTS0D7N04CLTXG onsemi
Hersteller: onsemi
Description: AFSM T6 40V LL NCH
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Technische Details NVMTS0D7N04CLTXG onsemi
Description: ONSEMI - NVMTS0D7N04CLTXG - Leistungs-MOSFET, n-Kanal, 40 V, 512 A, 670 µohm, DFNW, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 512A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 205W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: DFNW, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 670µohm.
Weitere Produktangebote NVMTS0D7N04CLTXG nach Preis ab 12.03 EUR bis 21.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVMTS0D7N04CLTXG | onsemi |
Description: AFSM T6 40V LL NCH Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFNW (8.3x8.4) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 205W (Tc) Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3050 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMTS0D7N04CLTXG | ONSEMI |
Description: ONSEMI - NVMTS0D7N04CLTXG - Single N-Channel Power MOSFET 40V, 433A, 0.63m / REEL 73AC4930 tariffCode: 0 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMTS0D7N04CLTXG | ON Semiconductor |
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auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVMTS0D7N04CLTXG |
|
Hersteller: onsemi
Description: AFSM T6 40V LL NCH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: AFSM T6 40V LL NCH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 12238 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFNW (8.3x8.4)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 205W (Tc)
Rds On (Max) @ Id, Vgs: 0.63mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Ta), 433A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.22 EUR |
| 10+ | 18.18 EUR |
| 100+ | 15.15 EUR |
| 500+ | 13.36 EUR |
| 1000+ | 12.03 EUR |
| NVMTS0D7N04CLTXG |
|
Hersteller: ONSEMI
Description: ONSEMI - NVMTS0D7N04CLTXG - Single N-Channel Power MOSFET 40V, 433A, 0.63m / REEL 73AC4930
tariffCode: 0
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Description: ONSEMI - NVMTS0D7N04CLTXG - Single N-Channel Power MOSFET 40V, 433A, 0.63m / REEL 73AC4930
tariffCode: 0
productTraceability: Yes-Date/Lot Code
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 17.61 EUR |
| NVMTS0D7N04CLTXG |
|
Hersteller: ON Semiconductor
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)