
auf Bestellung 2753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 9.84 EUR |
10+ | 7.2 EUR |
100+ | 5.35 EUR |
1000+ | 5.07 EUR |
3000+ | 4.56 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMTS1D2N08H onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMTS1D2N08H nach Preis ab 5.47 EUR bis 10.05 EUR
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NVMTS1D2N08H | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS1D2N08H | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMTS1D2N08H | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 147nC On-state resistance: 1.1mΩ Drain-source voltage: 80V Drain current: 337A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMTS1D2N08H | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMTS1D2N08H | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 337A; Idm: 900A; 150W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 150W Case: DFNW8 Mounting: SMD Kind of package: reel; tape Gate charge: 147nC On-state resistance: 1.1mΩ Drain-source voltage: 80V Drain current: 337A Pulsed drain current: 900A Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |